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عنوان مقاله کنفرانس : Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point

ناشر : IEEE

DOI کد :

10.1109/patmos.2017.8106967

سال انتشار : 2017

نویسنده : Michail Noltsis, Eleni Maragkoudaki, Dimitrios Rodopoulos, Francky Catthoor, Dimitrios Soudris

نوع : مقاله کنفرانس

لینک خروجی به مقاله کنفرانس

@incollection{1,
    doi = {10.1109/patmos.2017.8106967},
    url = {http://dx.doi.org/10.1109/patmos.2017.8106967},
    year = 2017,
    publisher = {IEEE},
    pages = {},
    author = {Michail Noltsis, Eleni Maragkoudaki, Dimitrios Rodopoulos, Francky Catthoor, Dimitrios Soudris},
    title = {Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point}
}
TY  - DATA
DO  - 10.1109/patmos.2017.8106967
UR  - http://dx.doi.org/10.1109/patmos.2017.8106967
TI  - Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point
PY  - 2017
PB  - IEEE
SP  - 
AU  -Michail Noltsis, Eleni Maragkoudaki, Dimitrios Rodopoulos, Francky Catthoor, Dimitrios Soudris
Michail Noltsis, Eleni Maragkoudaki, Dimitrios Rodopoulos, Francky Catthoor, Dimitrios Soudris, T. (2017). Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point. doi:10.1109/patmos.2017.8106967
“Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point.” (2017) - Author: Michail Noltsis, Eleni Maragkoudaki, Dimitrios Rodopoulos, Francky Catthoor, Dimitrios Soudris