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عنوان مقاله کنفرانس : The cutoff and critical power of Modulation Instability (MI) gain in Silicon-on-insulator (SOI) Nanowaveguides

ناشر : OSA

DOI کد :

10.1364/fio.2017.jw3a.47

سال انتشار : 2017

نویسنده : Deepa Chaturvedi, Ajit Kumar

نوع : مقاله کنفرانس

لینک خروجی به مقاله کنفرانس

@incollection{1,
    doi = {10.1364/fio.2017.jw3a.47},
    url = {http://dx.doi.org/10.1364/fio.2017.jw3a.47},
    year = 2017,
    publisher = {OSA},
    pages = {},
    author = {Deepa Chaturvedi, Ajit Kumar},
    title = {The cutoff and critical power of Modulation Instability (MI) gain in Silicon-on-insulator (SOI) Nanowaveguides}
}
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DO  - 10.1364/fio.2017.jw3a.47
UR  - http://dx.doi.org/10.1364/fio.2017.jw3a.47
TI  - The cutoff and critical power of Modulation Instability (MI) gain in Silicon-on-insulator (SOI) Nanowaveguides
PY  - 2017
PB  - OSA
SP  - 
AU  -Deepa Chaturvedi, Ajit Kumar
Deepa Chaturvedi, Ajit Kumar, T. (2017). The cutoff and critical power of Modulation Instability (MI) gain in Silicon-on-insulator (SOI) Nanowaveguides. doi:10.1364/fio.2017.jw3a.47
“The cutoff and critical power of Modulation Instability (MI) gain in Silicon-on-insulator (SOI) Nanowaveguides.” (2017) - Author: Deepa Chaturvedi, Ajit Kumar